View AUIRFR8401TR_8455154.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 www.irf.com ? 2013 international rectifier may 06, 2013 g d s gate drain source features ? ? advanced process technology ? ? new ultra low on-resistance ?? 175c operating temperature ? ? fast switching ? ? repetitive avalanche allowed up to tjmax ? ? lead-free, rohs compliant ? ? automotive qualified * description specifically designed for automo tive applications, this hexfet ? power mosfets utilizes the latest proce ssing techniques to achieve low on- resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications . absolute maximum ratings stresses beyond those listed under absolute maximum rati ngs may cause permanent damage to the device. these are stress ratings only; and functional operation of the dev ice at these or any other condition beyond those indicated in the specifications is not implied.expos ure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air condi- tions. ambient temperature (ta) is 25c, unless otherwise specified. base part number package type standard pack complete part number form quantity airfr8401 d - pak tube 75 auirfr8401 tape and reel 2000 AUIRFR8401TR auirfu8401 i-pak tube 75 auirfu8401 ordering information tape and reel left 3000 AUIRFR8401TRl tape and reel right 3000 AUIRFR8401TRr hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ automotive grade d-pak auirfr8401 i-pak auirfu8401 hexfet ? power mosfet d s g v dss 40v r ds(on) typ. 3.2m ? ? max 4.25m ? ? i d (silicon limited) 100a ? i d (package limited) 100a ? applications ???? electric power steering (eps) ? battery switch ? start /stop micro hybrid ? heavy loads ??? dc-dc converter parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 100 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 71 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 100 i dm pulsed drain current ? 400 p d @t c = 25c maximum power dissipation ? 79 w linear derating factor ? 0.53 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 c ? t stg storage temperature range auirfr8401 auirfu8401 downloaded from: http:///
? auirfr_u8401 2 www.irf.com ? 2013 international rectifier may 06, 2013 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 67 ? mj e as (tested) single pulse avalanche energy tested value ?? 94 ? i ar avalanche current ? see fig 14, 15, 24a, 24b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 1.9 c/w ? r ? cs junction-to-ambient (pcb mounted) ? CCC 50 r ? ja junction-to-ambient ? CCC 110 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.035 CCC v/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance CCC 3.2 4.25 m ?? v gs = 10v, i d = 60a ? v gs(th) gate threshold voltage 2.2 CCC 3.9 v v ds = v gs , i d = 50a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 40v, v gs = 0v ? CCC CCC 150 a v ds = 40v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v i gss gate-to-source reverse leakage CCC CCC -100 na v gs = -20v r g internal gate resistance CCC 2.0 CCC ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions gfs forward transconductance 198 CCC CCC s v ds = 10v, i d = 60a q g total gate charge CCC 42 63 i d = 60a q gs gate-to-source charge CCC 12 CCC v ds = 20v q gd gate-to-drain ("miller" ) charge CCC 14 CCC v gs = 10v q sync total gate charge sync. (q g - q gd ) CCC 28 CCC t d(on) turn-on delay time CCC 7.9 CCC ns v dd = 20v t r rise time CCC 34 CCC i d = 30a t d(off) turn-off delay time CCC 25 CCC r g = 2.7 ? t f fall time CCC 24 CCC v gs = 10v ? c iss input capacitance CCC 2200 CCC pf v gs = 0v c oss output capacitance CCC 340 CCC v ds = 25v c rss reverse transfer capacitance CCC 205 CCC ? = 1.0 mhz c oss eff. (er) effective output capacitance (energy related) ? CCC 410 CCC v gs = 0v, v ds = 0v to 32v , see fig. 11 ? c oss eff. (tr) effective output capacitance (time related) ? CCC 495 CCC v gs = 0v, v ds = 0v to 32v ? ? calculated continuous current bas ed on maximum allowable junction temperature. package limit current is 100a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.037mh r g = 50 ? , i as = 60a, v gs =10v. ?? i sd ? 60a, di/dt ? 918a/s, v dd ? v (br)dss , t j ? 175c. ? ?? pulse width ? 400s; duty cycle ? 2%. ? ?? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ?? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. ? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j = 25c, l=0.037mh, r g = 25 ? , i as = 60a, v gs =10v. notes: downloaded from: http:///
? auirfr_u8401 3 www.irf.com ? 2013 international rectifier may 06, 2013 d s g diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 100 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current CCC CCC 400 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c,i s = 60a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? CCC 3.2 CCC v/ns t j = 175c,i s =60a,v ds = 40v ? t rr reverse recovery time CCC 28 CCC ns t j = 25c v dd = 34v CCC 29 CCC t j = 125c i f = 60a, q rr reverse recovery charge CCC 28 CCC nc t j = 25c di/dt = 100a/s ??? CCC 31 CCC t j = 125c ? i rrm reverse recovery current CCC 1.6 CCC a t j = 25c ? downloaded from: http:///
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.8v vgs top 15v 10v 7.0v 6.0v 5.5v 5.3v 5.0v bottom 4.8v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 60a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 02 03 04 05 06 0 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds = 8.0v i d = 60a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.8v vgs top 15v 10v 7.0v 6.0v 5.5v 5.3v 5.0v bottom 4.8v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 10v ? 60s pulse width t j = 25c t j = 175c downloaded from: http:///
? auirfr_u8401 5 www.irf.com ? 2013 international rectifier may 06, 2013 fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. drain current 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig 11. typical c oss stored energy 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 39 40 41 42 43 44 45 46 47 48 49 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 10. drain-to-source breakdown voltage 0 10 20 30 40 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.5a 20a bottom 60a 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
? auirfr_u8401 6 www.irf.com ? 2013 international rectifier may 06, 2013 notes on repetitive avalanch e curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of tjmax. this is validated for every part type. 2. safe operation in avalanche is allowed as long astjmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. pd (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. iav = allowable avalanche current. 7. ? t = allowable rise in junction temperat ure, not to exceed tjmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d,t av ) = transient thermal resistance, see figures 14) p d (ave) = 1/2 ( 1.3bviav) = ? t/z thjc iav = 2 ? t/[1.3bvzth] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 13. maximum effective transient thermal impedance, junction-to-case 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 14. typical avalanche current vs.pulsewidth 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 60a fig 15. maximum avalanche energy vs. temperature downloaded from: http:///
? auirfr_u8401 7 www.irf.com ? 2013 international rectifier may 06, 2013 fig 17. threshold voltage vs. temperature fig. 18 - typical recovery current vs. di f /dt fig. 19 - typical recovery current vs. di f /dt fig. 20 - typical stored charge vs. di f /dt fig. 21 - typical stored charge vs. di f /dt fig 16. typical on-resistance vs. gate voltage 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 4 8 12 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 60a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 i r r m ( a ) i f = 40a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 20 40 60 80 100 q r r ( n c ) i f = 40a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 20 40 60 80 100 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c downloaded from: http:///
? auirfr_u8401 8 www.irf.com ? 2013 international rectifier may 06, 2013 fig 22. typical on-resistance vs. drain current 0 20 40 60 80 100 120 i d , drain current (a) 2.0 4.0 6.0 8.0 10.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 6.0v v gs = 10v downloaded from: http:///
? auirfr_u8401 9 www.irf.com ? 2013 international rectifier may 06, 2013 fig 23. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 24a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 25a. switching time test circuit fig 26a. gate charge test circuit t p v (br)dss i as fig 24b. unclamped inductive waveforms fig 25b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 26b. gate charge waveform downloaded from: http:///
d-pak (to-252aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ywwa xx ? xx date code y= year ww= work week a= automotive, leadfree aufr8401 lot code part number ir logo d-pak (to-252aa) package outline dimensio ns are shown in millimeters (inches) downloaded from: http:///
? auirfr_u8401 11 www.irf.com ? 2013 international rectifier may 06, 2013 i-pak (to-251aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ywwa xx ? xx date code y= year ww= work week a= automotive, leadfree aufu8401 lot code part number ir logo i-pak (to-251aa) package outline dimens ions are shown in millimeters (inches) downloaded from: http:///
? auirfr_u8401 12 www.irf.com ? 2013 international rectifier may 06, 2013 d-pak (to-252aa) tape & reel information (d imensions are shown in millimeters (inches)) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? auirfr_u8401 13 www.irf.com ? 2013 international rectifier may 06, 2013 qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level 3l-d-pak msl1 i-pak n/a esd machine model class m2 (+/- 200) ?? aec-q101-002 human body model class h1c (+/- 2000) ?? aec-q101-001 charged device model class c5 (+/- 2000) ?? aec-q101-005 rohs compliant yes ? qualification standards can be found at inte rnational rectifiers web site: http//www.irf.com/ ?? highest passing voltage. downloaded from: http:///
? auirfr_u8401 14 www.irf.com ? 2013 international rectifier may 06, 2013 ?????? important notice unless specifically designated for the automotive market, in ternational rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, e nhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry an d / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specific ations applicable at the time of sale in accordance with irs standard warranty. testing and other quality control te chniques are used to the extent ir deems necessary to sup- port this warranty. except where mandat ed by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or cust omer product design. customer s are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, cus- tomers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheet s is permissible only if reproduction is without alteration and is accompanied by all associated warr anties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documenta- tion. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any impl ied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not resp onsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal in jury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized applicati on, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and ex- penses, and reasonable attorney fees arising out of, directly or indirectly, any claim of pers onal injury or death associat- ed with such unintended or unauthorized use, even if such cl aim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense lo gistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applica- tions. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyers ow n risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environm ents unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the des- ignation au. buyers acknowledge and agree that, if t hey use any non-designated products in automotive applica- tions, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

▲Up To Search▲

Price & Availability of AUIRFR8401TR

	To Download AUIRFR8401TR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .